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PHOTODIODE
Si PIN photodiode
S6036 series
B7 mm lens plastic package
S6036 series is Si PIN photodiode molded into a plastic package with a B7 mm lens. Two types are available: S6036 of clear plastic package and S6036-01 of visible-cut package.
Features
Applications
l Plastic package with B7 mm lens l High-speed response: 25 MHz Typ. (VR=12 V, =850 nm) l High sensitivity: 0.56 A/W (=p) l Directivity: 25 (half angle) l S6036-01: visible-cut type
l Spatial light transmission l Optical communications l Optical data link l High-speed optical measurement l Optical switches l Laser radars
s Absolute maximum ratings
Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 35 -25 to +85 -40 to +100 Unit V C C
s Electrical and optical characteristics (Ta=25 C)
Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Temperature coefficient of dark current Cut-off frequency Terminal capacitance Half angle Symbol p S Isc ID TCID fc Ct VR=12 V, RL=50 =850 nm, -3 dB VR=12 V, f=1 MHz =p 100 lx, 2856 K VR=12 V Condition Min. 0.51 24 10 S6036 Typ. 320 to 1100 960 0.56 30 0.1 1.15 25 15 25 Max. 10 30 Min. 0.51 13 10 S6036-01 Typ. 760 to 1100 960 0.56 17 0.1 1.15 25 15 25 Max. 10 30 Unit nm nm A/W A nA times/C MHz pF degree
Si PIN photodiode
s Spectral response
(Typ. Ta=25 C) 0.7 0.6
S6036 series
(Typ. Ta=25 C)
s Dark current vs. reverse voltage
10 nA
QE=100 % S6036
PHOTO SENSITIVITY (A/W)
1 nA
0.4 0.3 0.2 0.1 0 200 S6036-01
DARK CURRENT
400 600 800 1000
0.5
100 pA
10 pA
1 pA 0.01
0.1
1
10
100
WAVELENGTH (nm)
KPINB0350EA
REVERSE VOLTAGE (V)
KPINB0351EA
s Terminal capacitance vs. reverse voltage
1 nF (Typ. Ta=25 C, f=1 MHz)
s Directivity
20 30 10 0 100 % 10
(Typ. Ta=25 C) 20 30
TERMINAL CAPACITANCE
80 %
100 pF
40 60 %
40
50 40 %
10 pF
50 60 20 % 70 80 90
60 70 80
1 pF 0.1
90
1 10 100
REVERSE VOLTAGE (V)
KPINB0352EA
RELATIVE SENSITIVITY
KPINB0353EA
s Dimensional outline (unit: mm, tolerance unless otherwise noted: 0.1)
CENTER OF LENS 7.9 0.2
(3.75)
5.0
3.25 0.2 MAX.
(0.95)
8.75 0.5
7.0
(5.0)
14.3 1.0
0.5
5.08 0.5
2.3 0.3
1.95
0.8
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
5.0
KPINA0047EA
Cat. No. KSPD1078E01 Sept. 2007 DN

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